Monte Carlo study of electron transport in strained Si/SiGe heterostructures

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作者：
Rashed, M.
Shih, W.-K.
Jallepalli, S.
Zaman, R.
Kwan, T.J.T.
Maziar, C.M.
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VLSI Design | / 6卷 / 1-4期
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页码：213 / 216
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