Monte Carlo study of electron transport in strained Si/SiGe heterostructures

被引：0
|
作者：
Rashed, M.
Shih, W.-K.
Jallepalli, S.
Zaman, R.
Kwan, T.J.T.
Maziar, C.M.
机构：
来源：
VLSI Design | / 6卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：213 / 216
相关论文
共 50 条
  • [21] Strained Si/SiGe heterostructures for device applications
    Schaeffler, F., 1600, Publ by Pergamon Press Inc, Tarrytown, NY, United States (37): : 4 - 6
  • [22] Band alignments in sidewall strained Si/strained SiGe heterostructures
    Wang, X
    Kencke, DL
    Liu, KC
    Register, LF
    Banerjee, SK
    SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2021 - 2025
  • [23] High electron and hole mobility enhancements in thin-body strained Si/Strained SiGe/strained Si heterostructures on insulator
    Åberg, I
    Chléirigh, CN
    Olubuyide, OO
    Duan, X
    Hoyt, JL
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 173 - 176
  • [24] ROOM-TEMPERATURE ELECTRON-MOBILITY IN STRAINED SI/SIGE HETEROSTRUCTURES
    NELSON, SF
    ISMAIL, K
    CHU, JO
    MEYERSON, BS
    APPLIED PHYSICS LETTERS, 1993, 63 (03) : 367 - 369
  • [25] Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures
    Burbaev, T. M.
    Bagaev, V. S.
    Bobrik, E. A.
    Kurbatov, V. A.
    Novikov, A. V.
    Rzaev, M. M.
    Sibeldin, N. N.
    Schaeffler, F.
    Tsvetkov, V. A.
    Tarakanov, A. G.
    Zaitsev, V. V.
    THIN SOLID FILMS, 2008, 517 (01) : 55 - 56
  • [26] Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures
    Gamiz, F.
    Roldan, J.B.
    Lopez-Villanueva, J.A.
    VLSI Design, 1998, 8 (1-4): : 253 - 256
  • [27] Monte Carlo study of the electron transport properties of an array of Si nanocrystals
    Chouthis, Ioannis
    Zianni, Xanthippi
    MATERIALS TODAY-PROCEEDINGS, 2015, 2 (02) : 491 - 496
  • [28] Monte Carlo simulation of electron transport in narrow gap heterostructures
    Thobel, JL
    Bonno, O
    Dessenne, F
    Boutry, H
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5286 - 5295
  • [29] Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates
    Bufler, FM
    Graf, P
    Keith, S
    Meinerzhagen, B
    APPLIED PHYSICS LETTERS, 1997, 70 (16) : 2144 - 2146
  • [30] HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI/SIGE HETEROSTRUCTURES
    MIYATSUJI, K
    UEDA, D
    MASAKI, K
    YAMAKAWA, S
    HAMAGUCHI, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 772 - 774
12345