Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

被引：0
|
作者：
Grunthaner, F.J.
Bicknell-Tassius, R.
Deelman, P.
Grunthaner, P.J.
Bryson, C.
Snyder, E.
Giuliani, J.L.
Apruzese, J.P.
Kepple, P.
机构：
来源：
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | 1998年 / 16卷 / 3 pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen
    V. A. Odnoblyudov
    A. R. Kovsh
    A. E. Zhukov
    A. Yu. Egorov
    N. A. Maleev
    S. S. Mikhrin
    V. M. Ustinov
    Technical Physics Letters, 2002, 28 : 517 - 520
  • [42] Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen
    Odnoblyudov, VA
    Kovsh, AR
    Zhukov, AE
    Egorov, AY
    Maleev, NA
    Mikhrin, SS
    Ustinov, VM
    TECHNICAL PHYSICS LETTERS, 2002, 28 (06) : 517 - 520
  • [43] Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides
    Togashi, Rie
    Goto, Ken
    Higashiwaki, Masataka
    Kumagai, Yoshinao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (05)
  • [44] Molecular beam epitaxy growth of an ultrahigh finesse microcavity
    Ecole Polytechnique Federale de, Lausanne, Lausanne, Switzerland
    J Cryst Growth, 1 -4 pt 2 (1313-1317):
  • [45] Molecular beam epitaxy growth of boron-containing nitrides
    Gupta, VK
    Wamsley, CC
    Koch, MW
    Wicks, GW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1246 - 1248
  • [46] Real-time control of the molecular beam epitaxy of nitrides
    Massies, J
    Grandjean, N
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 382 - 387
  • [47] Real-time control of the molecular beam epitaxy of nitrides
    Massies, J.
    Grandjean, N.
    Journal of Crystal Growth, 1999, 201 : 382 - 387
  • [48] SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    SKEVINGTON, PJ
    SCOTT, EG
    FRENCH, CL
    FOORD, JS
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 999 - 1008
  • [49] Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications
    Starikov, D
    Boney, C
    Berishev, I
    Hernandez, IC
    Bensaoula, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1404 - 1408
  • [50] Optical characterization of erbium doped III-nitrides prepared by metalorganic molecular beam epitaxy
    Hömmerich, U
    Seo, JT
    Thaik, M
    MacKenzie, JD
    Abernathy, CR
    Pearton, SJ
    Wilson, RG
    Zavada, JM
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
12345