Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

被引:0
|
作者
Grunthaner, F.J.
Bicknell-Tassius, R.
Deelman, P.
Grunthaner, P.J.
Bryson, C.
Snyder, E.
Giuliani, J.L.
Apruzese, J.P.
Kepple, P.
机构
来源
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | 1998年 / 16卷 / 3 pt 2期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] ULTRAHIGH-VACUUM APPARATUS FOR SILICON MOLECULAR-BEAM EPITAXY
    KANTER, BZ
    MOSHEGOV, NT
    NIKIFOROV, AI
    STENIN, SI
    TIIS, SA
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1988, 31 (02) : 461 - 464
  • [22] Ultrahigh-vacuum apparatus for silicon molecular-beam epitaxy
    Kanter, B.Z.
    Moshegov, N.T.
    Nikiforov, A.I.
    Stenin, S.I.
    Tiis, S.A.
    Instruments and experimental techniques New York, 1988, : 461 - 464
  • [23] Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy
    Spruytte, SG
    Larson, MC
    Wampler, W
    Coldren, CW
    Petersen, HE
    Harris, JS
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 506 - 515
  • [24] Molecular beam epitaxy of group-III nitrides on silicon substrates:: Growth, properties and device applications
    Semond, F
    Cordier, Y
    Grandjean, N
    Natali, F
    Damilano, B
    Vézian, S
    Massies, J
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 501 - 510
  • [25] Growth of III-nitrides by RF-assisted molecular beam epitaxy
    Piquette, EC
    Bridger, PM
    Bandic, ZZ
    McGill, TC
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 387 - 392
  • [26] GAN BASED III-V NITRIDES BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    BOTCHKAREV, A
    SALVADOR, A
    SVERDLOV, B
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 887 - 891
  • [27] Elaboration of III-V nitrides quantum dots in molecular beam epitaxy
    Daudin, B
    Widmann, F
    Feuillet, G
    Samson, Y
    Rouviere, JL
    Pelekanos, N
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1177 - 1180
  • [28] Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source molecular beam epitaxy
    Beresford, R
    Paine, DC
    Briant, CL
    JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) : 189 - 200
  • [29] III-V MOLECULAR-BEAM EPITAXY - TOWARD A CONCEPT OF ALL ULTRAHIGH-VACUUM PROCESSING
    HARBISON, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1033 - 1034
  • [30] GROWTH OF GROUP-III NITRIDES ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
    STEVENS, KS
    OHTANI, A
    SCHWARTZMAN, AF
    BERESFORD, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1186 - 1189