共 50 条
- [22] Ultrahigh-vacuum apparatus for silicon molecular-beam epitaxy Instruments and experimental techniques New York, 1988, : 461 - 464
- [24] Molecular beam epitaxy of group-III nitrides on silicon substrates:: Growth, properties and device applications PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 501 - 510
- [25] Growth of III-nitrides by RF-assisted molecular beam epitaxy WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 387 - 392
- [27] Elaboration of III-V nitrides quantum dots in molecular beam epitaxy SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1177 - 1180
- [29] III-V MOLECULAR-BEAM EPITAXY - TOWARD A CONCEPT OF ALL ULTRAHIGH-VACUUM PROCESSING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1033 - 1034
- [30] GROWTH OF GROUP-III NITRIDES ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1186 - 1189