共 50 条
- [1] Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1615 - 1620
- [2] Deposition and properties of group III nitrides by molecular beam epitaxy GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS: PHYSICS AND APPLICATIONS, 1998, 6 : 19 - 69
- [4] Growth of group III nitrides by metalorganic molecular beam epitaxy Journal of Crystal Growth, 178 (1-2): : 74 - 86
- [5] Growth of group III nitrides by metalorganic molecular beam epitaxy J Cryst Growth, 1-2 ([d]74-86):
- [6] Molecular beam epitaxy growth kinetics for group III nitrides JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2346 - 2348
- [7] Incorporation of nitrogen in Group III-Nitrides-Arsenides grown by molecular beam epitaxy (MBE) SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 260 - 263
- [10] Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides Technical Physics Letters, 2007, 33 : 333 - 336