LIMITATION OF SHORT-CHANNEL-LENGTH N + -POLYSILICON-GATE CMOS ICs.

被引:0
|
作者
Hsu, S.T. [1 ]
机构
[1] RCA Lab, Princeton, NJ, USA, RCA Lab, Princeton, NJ, USA
来源
R.C.A. Review | 1985年 / 46卷 / 02期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
INTEGRATED CIRCUITS, VLSI
引用
收藏
页码:153 / 162
相关论文
共 50 条
  • [31] Suppressed short-channel effects and improved stability in polysilicon thin film transistors with very thin ECR N2O plasma gate oxide
    Lee, JW
    Lee, NI
    Hur, SH
    Han, CH
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 519 - 522
  • [32] 0.5-MU-M GATE LENGTH SELF-ALIGNED GATE MODFET WITH REDUCED SHORT-CHANNEL EFFECTS
    HAN, CJ
    GRIDER, D
    NEWSTROM, K
    JOSLYN, P
    FRAASCH, A
    ARCH, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2448 - 2449
  • [33] Fabrication of a 0.2-μm ultra-thin SOI inverted sidewall recessed channel CMOS with single-type polysilicon gate
    Woo, DS
    Park, BS
    Lee, JD
    Park, BG
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (01) : 68 - 71
  • [34] Impact of a Deep Junction Coupled with a Short Channel Length on the ESD Robustness of a Grounded Gate NMOS Clamp
    Hopper, Casey
    Gallerano, Antonio
    Sankaralingam, Raj
    2023 45TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD, 2023,
  • [35] Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET
    Liu Chang
    Lu Ji-Wu
    Wu Wang-Ran
    Tang Xiao-Yu
    Zhang Rui
    Yu Wen-Jie
    Wang Xi
    Zhao Yi
    ACTA PHYSICA SINICA, 2015, 64 (16)
  • [36] Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length
    N. Boukortt
    B. Hadri
    S. Patanè
    A. Caddemi
    G. Crupi
    Silicon, 2017, 9 : 885 - 893
  • [37] Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs
    Song, Jooyoung
    Yu, Bo
    Xiong, Weize
    Taur, Yuan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (03) : 533 - 536
  • [38] Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length
    Boukortt, N.
    Hadri, B.
    Patane, S.
    Caddemi, A.
    Crupi, G.
    SILICON, 2017, 9 (06) : 885 - 893
  • [39] An Analytical MOSFET Model Including Gate Voltage Dependence of Channel Length Modulation Parameter for 20nm CMOS
    Hiroki, Akira
    Yamate, Akihiro
    Yamada, Masayoshi
    PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2, 2008, : 139 - 143
  • [40] Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 μm CMOS technology
    Chen, L
    Gingrich, DM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (04) : 861 - 867