共 50 条
- [31] Suppressed short-channel effects and improved stability in polysilicon thin film transistors with very thin ECR N2O plasma gate oxide INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 519 - 522
- [34] Impact of a Deep Junction Coupled with a Short Channel Length on the ESD Robustness of a Grounded Gate NMOS Clamp 2023 45TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD, 2023,
- [36] Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length Silicon, 2017, 9 : 885 - 893
- [39] An Analytical MOSFET Model Including Gate Voltage Dependence of Channel Length Modulation Parameter for 20nm CMOS PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2, 2008, : 139 - 143