PRIME process for deep UV and e-beam lithography

被引：11
|
作者：
Pierrat, C. [1 ]
Tedesco, S. [1 ]
Vinet, F. [1 ]
Mourier, T. [1 ]
Lerme, M. [1 ]
DalZotto, B. [1 ]
Guibert, J.C. [1 ]
机构：
[1] LETI, France
来源：
Microelectronic Engineering | 1990年 / 11卷 / 1-4期
关键词：
Dry Developed Resist - E-Beam Lithography - Polysilicon - PRIME (Positive Resist Image by Dry Etching - Rutherford Backscattering - Silylation;
D O I：
10.1016/0167-9317(90)90160-U
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：507 / 514
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