PRIME process for deep UV and e-beam lithography

被引:11
|
作者
Pierrat, C. [1 ]
Tedesco, S. [1 ]
Vinet, F. [1 ]
Mourier, T. [1 ]
Lerme, M. [1 ]
DalZotto, B. [1 ]
Guibert, J.C. [1 ]
机构
[1] LETI, France
关键词
Dry Developed Resist - E-Beam Lithography - Polysilicon - PRIME (Positive Resist Image by Dry Etching - Rutherford Backscattering - Silylation;
D O I
10.1016/0167-9317(90)90160-U
中图分类号
学科分类号
摘要
引用
收藏
页码:507 / 514
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