11B + IMPLANTATION AND POSTIMPLANT ANNEAL STUDIES IN Hg1 - xCdxTe.

被引：0
|
作者：
Kao, T.-M. [1 ]
Sigmon, T.W. [1 ]
机构：
[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期
关键词：
ELECTRIC PROPERTIES - HEAT TREATMENT - Annealing - MERCURY AND AMALGAMS - Ion Implantation;
D O I：
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中图分类号：
学科分类号：
摘要：
We report detailed studies of the change in crystal quality and electrical properties of as-implanted and postimplant annealed Hg//1// minus //xCd//xTe. Using a multistage, low temperature ( less than equivalent to 320 degree C) postimplant annealing process with a Hg//1// minus //xCd//xTe native oxide encapsulation, we recover the implantation damage and activate a significant fraction of the implanted impurity.
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页码：578 / 580
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