11B + IMPLANTATION AND POSTIMPLANT ANNEAL STUDIES IN Hg1 - xCdxTe.

被引：0

作者：

Kao, T.-M. ^{[1
]}

Sigmon, T.W. ^{[1
]}

机构：

[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期

关键词：

ELECTRIC PROPERTIES - HEAT TREATMENT - Annealing - MERCURY AND AMALGAMS - Ion Implantation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report detailed studies of the change in crystal quality and electrical properties of as-implanted and postimplant annealed Hg//1// minus //xCd//xTe. Using a multistage, low temperature ( less than equivalent to 320 degree C) postimplant annealing process with a Hg//1// minus //xCd//xTe native oxide encapsulation, we recover the implantation damage and activate a significant fraction of the implanted impurity.

引用

页码：578 / 580

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