Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 16卷 / 2373期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Comparative Analog Analysis of Si,Ge and Si0.7Ge0.3 Channel Based DG-JLFET
    Porwal, Ankita
    Sahu, Chitrakant
    Periasamy, C.
    2021 IEEE INTERNATIONAL SYMPOSIUM ON SMART ELECTRONIC SYSTEMS (ISES 2021), 2021, : 59 - 63
  • [42] Normal-incident Si0.7Ge0.3/Si multiple quantum wells photodetectors
    Li, Cheng
    Yang, Qinqing
    Wang, Hongjie
    Luo, Liping
    Cheng, Buwen
    Yu, Jinzhong
    Wang, Qiming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (05): : 480 - 482
  • [43] ELECTRON-TRANSPORT THROUGH ANTIDOT SUPERLATTICES IN SI/SI0.7GE0.3 HETEROSTRUCTURES
    TOBBEN, D
    HOLZMANN, M
    KUHN, S
    LORENZ, H
    ABSTREITER, G
    KOTTHAUS, JP
    SCHAFFLER, F
    PHYSICAL REVIEW B, 1994, 50 (12): : 8853 - 8856
  • [44] Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates
    Li, JH
    Peng, CS
    Mai, ZH
    Zhou, JM
    Huang, Q
    Dai, DY
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1292 - 1297
  • [45] New type of magnetoresistance oscillations in antidot superlatices on the Si/Si0.7Ge0.3 heterostructure
    Olshanetsky, E. B.
    Kvon, Z. D.
    Renard, V. T.
    Portal, J. C.
    Hartmann, J. A.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 537 - +
  • [46] High-mobility Si and Ge structures
    Schaffler, F
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (12) : 1515 - 1549
  • [47] Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme
    Zhao, Zhiqian
    Li, Yongliang
    Wang, Guilei
    Du, Anyan
    Li, Yan
    Zhang, Qingzhu
    Xu, Gaobo
    Zhang, Yongkui
    Luo, Jun
    Li, JunFeng
    Wang, Wenwu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (12)
  • [48] In situ visualization of traveling solvent growth of thin Si0.7Ge0.3 crystals
    Chiang, Ping-ting
    Lan, Chung-wen
    JOURNAL OF CRYSTAL GROWTH, 2022, 581
  • [49] High room temperature hole mobility In Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation doped heterostructures in the absence of parallel conduction
    Madhavi, S.
    Venkataraman, V.
    Annual Device Research Conference Digest, 2000, : 29 - 30
  • [50] Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation
    Kim, C
    Robinson, IK
    Spila, T
    Greene, JE
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7608 - 7612
12345