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- [33] A comparison of the kinetics and the evolution of microstructure of the solid phase crystallized a-(Si0.7Ge0.3/Si) and a-(Si/Si0.7Ge0.3) bilayer films;: Interface versus surface nucleated films JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2A): : L108 - L111
- [34] Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,