TWO-DIMENSIONAL SHORT CHANNEL MOSFET STEADY STATE AND SUBSTRATE CURRENT SIMULATION.

被引：0

作者：

Du Min ^{[1
]}

Huang, Chang ^{[1
]}

机构：

[1] Shanxi Lishan Microelectronics Corp, Shanxi, China, Shanxi Lishan Microelectronics Corp, Shanxi, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 01期

关键词：

D O I：

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学科分类号：

摘要：

引用

页码：1 / 6

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