TWO-DIMENSIONAL SHORT CHANNEL MOSFET STEADY STATE AND SUBSTRATE CURRENT SIMULATION.

被引：0
|
作者：
Du Min [1 ]
Huang, Chang [1 ]
机构：
[1] Shanxi Lishan Microelectronics Corp, Shanxi, China, Shanxi Lishan Microelectronics Corp, Shanxi, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 01期
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学科分类号：
摘要：
11
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页码：1 / 6
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