TWO-DIMENSIONAL SHORT CHANNEL MOSFET STEADY STATE AND SUBSTRATE CURRENT SIMULATION.

被引：0
|
作者：
Du Min [1 ]
Huang, Chang [1 ]
机构：
[1] Shanxi Lishan Microelectronics Corp, Shanxi, China, Shanxi Lishan Microelectronics Corp, Shanxi, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：1 / 6
相关论文
共 50 条
  • [1] Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
    Harada, Naoki
    Sato, Shintaro
    Yokoyama, Naoki
    IEICE TRANSACTIONS ON ELECTRONICS, 2015, E98C (03): : 283 - 286
  • [2] An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's
    Agostinelli Jr., V.M.
    Bordelon, T.J.
    Wang, X.L.
    Yeap, C.F.
    Maziar, Christine M.
    Tasch, Al F.
    Electron device letters, 1992, 13 (11): : 554 - 556
  • [3] Two-dimensional energy-dependent models for the simulation of substrate current in submicron MOSFET's
    Agostinelli Jr., V.Martin
    Bordelon, T.James
    Wang, Xiaolin
    Hasnat, Khaled
    Yeap, Choh-Fei
    Lemersal Jr., D.B.
    Tasch, Al F.
    Maziar, Christine M.
    1784, IEEE, Piscataway, NJ, United States (41):
  • [4] COMPARISON BETWEEN TWO-DIMENSIONAL SHORT-CHANNEL MOSFET MODELS
    KUMAR, U
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 37 - 46
  • [5] Probing the mechanism of fusion is two-dimensional computer simulation.
    Chanturiya, A
    Scaria, P
    Woodle, M
    BIOPHYSICAL JOURNAL, 2000, 78 (01) : 60A - 60A
  • [6] TWO-DIMENSIONAL SIMULATION OF LASER-DIODES IN THE STEADY-STATE
    KAHEN, KB
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) : 641 - 651
  • [7] Two-dimensional numerical simulation of a CSP semiconductor laser in steady state
    Zhou, Yong-Gang
    Niu, Zhen-Yi
    Xu, Jin-Ping
    2003, Nanjing University of Aeronautics an Astronautics (35):
  • [8] MOSFET Scaling: Impact of Two-dimensional Channel Materials
    Granzner, Ralf
    Geng, Zhansong
    Kinberger, Wilhelm
    Schwierz, Frank
    2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 466 - 469
  • [9] Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm
    Huang, CK
    Zhang, WE
    Yang, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 842 - 848
  • [10] Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm
    Electrical Engineering Department, University of Maryland, College Park, MD 20742, United States
    IEEE Trans. Electron Devices, 4 (842-848):
12345