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Preparation and characterization of PZT thin films on CeO2(111)/Si(111) structures
被引:0
|
作者
:
Sakai, I.
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0
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0
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0
机构:
Tokyo Inst of Technology, Yokohama, Japan
Tokyo Inst of Technology, Yokohama, Japan
Sakai, I.
[
1
]
Tokumitu, E.
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0
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0
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0
机构:
Tokyo Inst of Technology, Yokohama, Japan
Tokyo Inst of Technology, Yokohama, Japan
Tokumitu, E.
[
1
]
Ishiwara, H.
论文数:
0
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0
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0
机构:
Tokyo Inst of Technology, Yokohama, Japan
Tokyo Inst of Technology, Yokohama, Japan
Ishiwara, H.
[
1
]
机构
:
[1]
Tokyo Inst of Technology, Yokohama, Japan
来源
:
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
|
1996年
/ 35卷
/ 9 B期
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页码:4987 / 4990
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