Effect of the surface treatment on the room-temperature bonding of Al to Si and SiO2

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The Univ of Tokyo, Tokyo, Japan [1 ]
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J Mater Sci | / 1卷 / 253-258期
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This work was supported in part by a grant-in-aid for scientific research from the Ministry of Education. The authors wish to thank Dr Y. Takahashi and Mr H. Takagi for support in the TEM investigations;
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