共 50 条
- [1] Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (07): : 4197 - 4203
- [2] Room-temperature wafer bonding using Ar beam surface activation SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS V, PROCEEDINGS, 2001, 99 (35): : 265 - 274
- [3] Silicon wafer bonding at room temperature by Ar beam surface activation in vacuum SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV, 1998, 36 : 393 - 400
- [4] Room-temperature bonding of GaN to Al using Ar-Beam surface activation IEEJ Trans. Sens. Micromach., 8 (369-372):
- [5] Mechanism of bond formation and effects of surface roughness in room-temperature wafer bonding Yosetsu Gakkai Shi/Journal of the Japan Welding Society, 2000, 69 (02): : 62 - 64
- [6] Room-temperature Wafer Direct Bonding Using Ne-beam Surface-Activation SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2014, 64 (05): : 69 - 75
- [10] Effect of the surface roughness on room temperature bonding Yosetsu Gakkai Shi/Journal of the Japan Welding Society, 2000, 69 (02): : 54 - 57