GaAlAs/GaAs MOCVD GROWTH FOR SURFACE EMITTING LASER.

被引：0

作者：

Koyama, Fumio ^{[1
]}

Unenohara, Hiroyuki ^{[1
]}

Sakaguchi, Takahiro ^{[1
]}

Iga, Kenichi ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Nagatsuta, Jpn, Tokyo Inst of Technology, Nagatsuta, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 07期

关键词：

METALORGANIC CHEMICAL VAPOR DEPOSITION - MULTILAYER BRAGG REFLECTORS - SURFACE EMITTING LASER;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1077 / 1081

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