GaAlAs/GaAs MOCVD GROWTH FOR SURFACE EMITTING LASER.

被引：0
|
作者：
Koyama, Fumio [1 ]
Unenohara, Hiroyuki [1 ]
Sakaguchi, Takahiro [1 ]
Iga, Kenichi [1 ]
机构：
[1] Tokyo Inst of Technology, Nagatsuta, Jpn, Tokyo Inst of Technology, Nagatsuta, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 07期
关键词：
METALORGANIC CHEMICAL VAPOR DEPOSITION - MULTILAYER BRAGG REFLECTORS - SURFACE EMITTING LASER;
D O I：
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摘要：
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页码：1077 / 1081
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