AUTOMATIC SYSTEM FOR CHEMICAL VAPOR DEPOSITION IN INTEGRATED CIRCUIT PROCESSING.

被引：0
|
作者：
Kennedy, Bobby W.
机构：
来源：
Insulation, circuits | 1982年 / 28卷 / 01期
关键词：
METALS AND ALLOYS - Vapor Deposition - SAPPHIRE - SILICON AND ALLOYS;
D O I：
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中图分类号：
学科分类号：
摘要：
A complete, computer-controlled, automatic chemical vapor deposition system has been developed by NASA for applications in the processing of three-inch silicon wafers, three-inch sapphire substrates, or three-inch spinel substrates. All chemical vapor deposition process parameters are controlled by a programmer that can be entirely preset, and any parameter can be varied ″in-process″ and with manual override capability for any and all functions. The system is designed with personnel safety in mind. The hardware of the system is briefly described.
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页码：55 / 57
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