STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SILICON WAFERS WITH THE SCANNING ELECTRON MICROSCOPE.

被引：0

作者：

Karelin, N.M.

Dusakin, S.I.

Litvinov, Yu.M.

Rau, E.I.

Spivak, G.V.

机构：

来源：

Soviet Microelectronics (English Translation of Mikroelektronika) | 1980年 / 9卷 / 01期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：26 / 30

共 50 条

[31] SURFACE MICROEXTENSOMETRY BY MEANS OF MOIRE INTERFEROMETRY WITH A SCANNING ELECTRON MICROSCOPE.
Ambroise, Marc-Henri
Bretheau, T.
Lesegno, P.Viaris de
Journal of Applied Mechanics, Transactions ASME, 1987, 54 (01): : 237 - 239
[32] Mass Spectroscopic Methods of Microanalysis Using the Scanning Electron Microscope.
Rehme, Hans
Wolfgang, Eckhard
Siemens-Zeitschrift, 1975, 49 (11): : 732 - 739
[33] Wear Behavior of Materials. Studies with the Scanning Electron Microscope.
Pohl, Michael
Buchard, Willy Guenther
Krause, Hans
Schroelkamp, Christian
Schmiertechnik + Tribologie, 1981, 28 (01): : 16 - 22
[34] CONCERNING THE FORMATION OF IMAGES OF DEEP HOLES IN A SCANNING ELECTRON MICROSCOPE.
Gorodskii, D.D.
Zadorozhnyi, S.S.
Luk'yanov, A.E.
Rau, E.I.
Spivak, G.V.
Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizika), 1975, 30 (04): : 32 - 36
[35] Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers
Kononchuk, O
Bondarenko, I
Rozgonyi, G
SOLID STATE PHENOMENA, 1998, 63-4 : 61 - 67
[36] STUDY OF RADIATION DAMAGE IN SILICON WITH SCANNING ELECTRON MICROSCOPE
DAVIDSON, SM
NATURE, 1970, 227 (5257) : 487 - &
[37] QUANTITATIVE COMPOSITION ANALYSIS USING THE BACKSCATTERED ELECTRON SIGNAL IN A SCANNING ELECTRON MICROSCOPE.
Robinson, V.N.E.
Cutmore, N.G.
Burdon, R.G.
Scanning Electron Microscopy, 1984, v : 483 - 492
[38] Structural identification of electrically active defects in the active layer of SIMOX wafers
Bondarenko, IE
Kononchuk, OV
Rozgonyi, GA
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 185 - 190
[39] IMAGING WITH RUTHERFORD SCATTERED ELECTRONS IN THE SCANNING TRANSMISSION ELECTRON MICROSCOPE.
Treacy, M.M.J.
Scanning Electron Microscopy, 1981, : 185 - 197
[40] FUNCTION TESTING OF SEMICONDUCTOR DEVICES WITH THE STROBOSCOPIC SCANNING ELECTRON MICROSCOPE.
Ura, Katsumi
Fujioka, Hiromu
Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 308 - 327

← 1 2 3 4 5 →