In situ study of the interfaces between plasma-deposited amorphous silicon and silicon dioxide by UV-IR spectroellipsometry

被引：0

作者：

Shirai, Hajime ^{[1
]}

Ossikovski, Razvigor ^{[1
]}

Drevillon, Bernard ^{[1
]}

机构：

[1] CNRS, Palaiseau, France

来源：

| 1600年 / JJAP, Minato-ku, Japan卷 / 33期

关键词：

13;

D O I：

暂无

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学科分类号：

摘要：

引用

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[31] IN-SITU INVESTIGATION OF AMORPHOUS-SILICON SILICON DIOXIDE INTERFACES BY INFRARED ELLIPSOMETRY
OSSIKOVSKI, R
SHIRAI, H
DREVILLON, B
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 166 : 825 - 828
[32] IN-SITU INVESTIGATION OF AMORPHOUS SILICON-SILICON DIOXIDE INTERFACES BY INFRARED ELLIPSOMETRY
OSSIKOVSKI, R
SHIRAI, H
DREVILLON, B
APPLIED PHYSICS LETTERS, 1994, 64 (14) : 1815 - 1817
[33] EFFECTS OF TEMPERATURE AND BIAS ON THE MICROSTRUCTURE OF PLASMA-DEPOSITED AMORPHOUS-SILICON CARBIDE
LU, HY
PETRICH, MA
JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) : 2054 - 2056
[34] OPTICAL, ELECTRICAL AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON
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IIZIMA, S
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[35] In situ IR spectroscopic study of the reaction of dimethylaluminum hydride with photochemically deposited amorphous silicon
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[36] THERMAL-EXPANSION AND ELASTIC PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON AND SILICON-OXIDE FILMS
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[37] HYDROGEN-RELATED MECHANICAL-STRESS IN AMORPHOUS-SILICON AND PLASMA-DEPOSITED SILICON-NITRIDE
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[38] Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes
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[39] Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation
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JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 704 - 708
[40] Atomistic analysis of the mechanism of hydrogen diffusion in plasma-deposited amorphous silicon thin films
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