In situ study of the interfaces between plasma-deposited amorphous silicon and silicon dioxide by UV-IR spectroellipsometry

被引:0
|
作者
Shirai, Hajime [1 ]
Ossikovski, Razvigor [1 ]
Drevillon, Bernard [1 ]
机构
[1] CNRS, Palaiseau, France
来源
| 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词
13;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] IN-SITU STUDY OF THE INTERFACES BETWEEN PLASMA-DEPOSITED AMORPHOUS-SILICON AND SILICON DIOXIDE BY UV-IR SPECTROELLIPSOMETRY
    SHIRAI, H
    OSSIKOVSKI, R
    DREVILLON, B
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B): : 4177 - 4180
  • [2] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
    ADAMS, AC
    ALEXANDER, FB
    CAPIO, CD
    SMITH, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
  • [3] TRANSPORT-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON DIOXIDE
    MARIUCCI, L
    FORTUNATO, G
    FOGLIETTI, P
    REITA, C
    DELLASALA, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) : 123 - 125
  • [4] Erbium incorporation in plasma-deposited amorphous silicon
    Terukov, EI
    Konkov, OI
    Kudoyarova, VK
    Koughia, KV
    Weiser, G
    Kühne, H
    Kleider, JP
    Longeaud, C
    Brüggemann, R
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 614 - 618
  • [5] In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers
    Sharma, K.
    Verheijen, M. A.
    van de Sanden, M. C. M.
    Creatore, M.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
  • [6] Chromium and tantalum adhesion to plasma-deposited silicon dioxide and silicon nitride
    Buchwalter, L.P., 1600, (VSP Int Sci Publ, Zeist, Netherlands):
  • [7] OXIDATION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON
    DREVILLON, B
    VAILLANT, F
    THIN SOLID FILMS, 1985, 124 (3-4) : 217 - 222
  • [8] Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide
    Au, V
    Charles, C
    Boswell, RW
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (01) : 164 - 171
  • [9] CHROMIUM AND TANTALUM ADHESION TO PLASMA-DEPOSITED SILICON DIOXIDE AND SILICON-NITRIDE
    BUCHWALTER, LP
    JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY, 1995, 9 (01) : 97 - 116
  • [10] POLYSILICON TRANSISTORS FABRICATED ON PLASMA-DEPOSITED AMORPHOUS-SILICON
    IPRI, AC
    KAGANOWICZ, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 708 - 710