Electromigration transport mechanisms in Al thin-film conductors

被引：0

|

作者：

机构：

来源：

J Appl Phys | / 1卷 / 163期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[31] METALLIC THIN-FILM ELECTRICAL CONDUCTORS
MATTOX, DM
PLATING AND SURFACE FINISHING, 1995, 82 (07): : 54 - 55
[32] ELECTROMIGRATION FAILURE IN NICR THIN-FILM STRIPES
SATAKE, T
APPLIED PHYSICS LETTERS, 1973, 23 (09) : 496 - 498
[33] Electromigration path in Cu thin-film lines
Hu, CK
Rosenberg, R
Lee, KY
APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2945 - 2947
[34] THE EFFECTS OF HYDROGEN AMBIENTS ON ELECTROMIGRATION KINETICS IN A1-2-PERCENT CU THIN-FILM CONDUCTORS
PASCO, RW
FELTON, LE
SCHWARZ, JA
SOLID-STATE ELECTRONICS, 1983, 26 (11) : 1053 - 1063
[35] ELECTROMIGRATION-INDUCED COMPRESSIVE STRESSES IN ENCAPSULATED THIN-FILM CONDUCTORS WITH AND WITHOUT THE PRESENCE OF DRIFT VELOCITY
HEMMERT, RS
SHATZKES, M
JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 813 - 819
[36] ELECTROMIGRATION AND STRESS-INDUCED VOIDING IN FINE AL AND AL-ALLOY THIN-FILM LINES
HU, CK
RODBELL, KP
SULLIVAN, TD
LEE, KY
BOULDIN, DP
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (04) : 465 - 497
[37] COMPUTERIZED TESTING OF THIN-FILM CIRCUIT CONDUCTORS
GERHARD, AR
PERDICK, LP
SOLID STATE TECHNOLOGY, 1971, 14 (09) : 41 - &
[38] GRAIN-BOUNDARY AND VACANCY DIFFUSION-MODEL FOR ELECTROMIGRATION-INDUCED DAMAGE IN THIN-FILM CONDUCTORS
LLOYD, JR
NAKAHARA, S
THIN SOLID FILMS, 1980, 72 (03) : 451 - 456
[39] ELECTROMIGRATION BEHAVIOR ANALYSIS OF ALUMINUM-ALLOYS THIN-FILM CONDUCTORS USING MAXIMUM-LIKELIHOOD METHODS
WEIS, EA
KINSBRON, E
SNYDER, MM
VOGEL, B
CROITORU, N
MICROELECTRONICS AND RELIABILITY, 1992, 32 (06): : 887 - 900
[40] Electromigration drift and threshold in Cu thin-film interconnects
Frankovic, R
Bernstein, GH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (12) : 2233 - 2239

← 1 2 3 4 5 →