Growth process in initial stage of GaAs/GaP(001) by molecular beam epitaxy

被引：0
|
作者：
机构：
[1] Yoshikawa, Masahiro
[2] Nomura, Takashi
[3] Ishikawa, Kenji
[4] Hagino, Minoru
来源：
Yoshikawa, Masahiro | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词：
6;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI BY MOLECULAR-BEAM EPITAXY
    TAKASUGI, H
    BANDO, Y
    KITAMI, Y
    KAWABE, M
    JOURNAL OF ELECTRON MICROSCOPY, 1987, 36 (05): : 301 - 301
  • [22] INITIAL GROWTH OF GAAS ON SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YODO, T
    TAMURA, M
    JOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) : 85 - 91
  • [23] (111) CDTE MOLECULAR-BEAM EPITAXY GROWTH ON MISORIENTED (001) GAAS SUBSTRATE
    TATARENKO, S
    CIBERT, J
    GOBIL, Y
    FEUILLET, G
    LIGEON, E
    DANG, LS
    SAMINADAYAR, K
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 126 - 130
  • [24] Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy
    Chen, H
    Li, ZQ
    Liu, HF
    Wan, L
    Zhang, MH
    Huang, Q
    Zhou, JM
    Luo, Y
    Han, YJ
    Tao, K
    Yang, N
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 811 - 814
  • [25] Surface structure transitions and growth mechanisms in the molecular beam epitaxy on InAs and GaAs (001)
    Galitsyn, YG
    Mansurov, VG
    Moshchenko, SP
    Toropov, AI
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1999, 7-8 : 89 - 100
  • [26] Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxy
    Robey, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04): : 2423 - 2428
  • [27] NUCLEATION AND GROWTH-PROCESSES DURING MOLECULAR-BEAM EPITAXY OF GAAS(001)
    MAO, HB
    LU, W
    SHEN, SC
    JOURNAL OF CRYSTAL GROWTH, 1995, 151 (1-2) : 31 - 37
  • [28] Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
    Brandt, Oliver
    Yang, Hui
    Trampert, Achim
    Wassermeier, Matthias
    Ploog, Klaus H.
    Applied Physics Letters, 1997, 71 (04):
  • [29] Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)
    Ortega-Gallegos, J.
    Lastras-Martinez, A.
    Lastras-Martinez, L. F.
    Balderas-Navarro, R. E.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 8, 2008, : 2573 - 2577
  • [30] SILICON MOLECULAR-BEAM EPITAXY ON GAP AND GAAS
    ZALM, PC
    BULLELIEUWMA, CWT
    MAREE, PMJ
    PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 154 - 165
12345