Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)

被引：1
|
作者：
Ortega-Gallegos, J. [1 ]
Lastras-Martinez, A. [1 ]
Lastras-Martinez, L. F. [1 ]
Balderas-Navarro, R. E. [1 ]
机构：
[1] Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, San Luis Potosi, Mexico
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 8 | 2008年
关键词：
D O I：
10.1002/pssc.200779113
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E-1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In0.3Ga0.7As on GaAs (001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As-4 or As-2 flux pressure of 5 x 10(-6) Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2573 / 2577
页数：5
相关论文
共 50 条
  • [1] SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001)
    RUMBERG, J
    ZETTLER, JT
    STAHRENBERG, K
    PLOSKA, K
    RICHTER, W
    DAWERITZ, L
    SCHUTZENDUBE, P
    WASSERMEIER, M
    SURFACE SCIENCE, 1995, 337 (1-2) : 103 - 108
  • [2] REFLECTANCE ANISOTROPY AS A SURFACE SCIENCE PROBE OF THE GROWTH OF INAS ON (001) GAAS BY MOLECULAR-BEAM EPITAXY
    ARMSTRONG, SR
    PEMBLE, ME
    TAYLOR, AG
    FAWCETTE, PN
    NEAVE, JH
    JOYCE, BA
    ZHANG, J
    APPLIED PHYSICS LETTERS, 1993, 63 (04) : 503 - 505
  • [3] On the origin of reflectance-anisotropy oscillations during GaAs (001) homoepitaxy
    Ortega-Gallegos, J.
    Guevara-Macias, L. E.
    Ariza-Flores, A. D.
    Castro-Garcia, R.
    Lastras-Martinez, L. F.
    Balderas-Navarro, R. E.
    Lopez-Estopier, R. E.
    Lastras-Martinez, A.
    APPLIED SURFACE SCIENCE, 2018, 439 : 963 - 967
  • [4] Desorption of indium during the growth of GaAs/InGaAs/GaAs heterostructures by molecular beam epitaxy
    Mozume, Teruo
    Ohbu, Isao
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (10): : 3277 - 3281
  • [5] GROWTH OF GAAS, ALGAAS, AND INGAAS ON (111)B GAAS BY MOLECULAR-BEAM EPITAXY
    ELCESS, K
    LIEVIN, JL
    FONSTAD, CG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 638 - 641
  • [6] Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1-xGaxAs on GaAs(001) surfaces by molecular beam epitaxy
    Taylor, AG
    Turner, AR
    Joyce, BA
    Pemble, ME
    SURFACE SCIENCE, 1997, 375 (2-3) : 367 - 373
  • [7] A RHEED AND REFLECTANCE ANISOTROPY STUDY OF THE MBE GROWTH OF GAAS, ALAS AND INAS ON GAAS(001)
    ARMSTRONG, SR
    HOARE, RD
    PEMBLE, ME
    POVEY, IM
    STAFFORD, A
    TAYLOR, AG
    JOYCE, BA
    NEAVE, JH
    KLUG, DR
    ZHANG, J
    SURFACE SCIENCE, 1992, 274 (02) : 263 - 269
  • [8] DESORPTION OF INDIUM DURING THE GROWTH OF GAAS/INGAAS/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
    MOZUME, T
    OHBU, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (10): : 3277 - 3281
  • [9] STUDY OF THE MECHANISM OF GAAS(001) MOLECULAR-BEAM EPITAXY
    MAO, HB
    LU, W
    SHEN, XC
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1995, 4 (10): : 757 - 765
  • [10] Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
    Martini, S
    Quivy, AA
    Ugarte, D
    Lange, C
    Richter, W
    Tokranov, VE
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 46 - 50
12345