Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)

被引：1
|
作者：
Ortega-Gallegos, J. [1 ]
Lastras-Martinez, A. [1 ]
Lastras-Martinez, L. F. [1 ]
Balderas-Navarro, R. E. [1 ]
机构：
[1] Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, San Luis Potosi, Mexico
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 8 | 2008年
关键词：
D O I：
10.1002/pssc.200779113
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E-1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In0.3Ga0.7As on GaAs (001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As-4 or As-2 flux pressure of 5 x 10(-6) Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：2573 / 2577
页数：5
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