MODEL OF RECOMBINATION OF MINORITY CARRIERS IN n-TYPE GERMANIUM IRRADIATED WITH 660 MeV PROTONS.

Comparative studies of the temperature dependences of the lifetime tau of the minority carriers in n-type germanium, irradiated with 660 MeV protons and **6**0Co gamma rays, established characteristic features of the influence of disordered regions on the recombination processes. The recombination of excess carriers in samples subjected to both types of radiation was due to the same defects with a level at E//c minus 0. 20 eV. However, in the case of proton irradiation these defects were localized within disordered regions surrounded by n-n** plus junctions. The potential barrier and the asymmetry of the recombination coefficients at 270 degree K were determined.