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- [2] HALL MOBILITY OF ELECTRONS IN HEAVILY DOPED N-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1962, 3 (11): : 2545 - 2548
- [4] IMPURITY PHOTOCONDUCTIVITY OF N-TYPE GERMANIUM IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 710 - 711
- [6] HOT ELECTRON HALL MOBILITY OF N-TYPE GERMANIUM PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530): : 923 - &
- [9] METHOD FOR DETERMINATION OF DEGREE OF COMPENSATION OF N-TYPE SI FROM HALL-MOBILITY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1298 - 1299
- [10] EFFECT OF CU ON THE HALL-MOBILITY IN N-TYPE EPITAXIAL GAAS-LAYERS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (01): : K41 - K44