Diffusion of Sb in Si1-xGex-Alloy Layers

被引：0

作者：

Kringhøj, P. ^{[1
]}

Nylandsted Larsen, A. ^{[1
]}

机构：

[1] Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark

来源：

Defect and Diffusion Forum | 1997年 / 143-147卷

关键词：

Carrier concentration - Molecular beams - Si-Ge alloys - Diffusion - Molecular beam epitaxy - Silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The diffusion in Si1-xGex alloy lasers, and the change in diffusivity due to chemical effects and secondly strain effects was investigated. All structures were grown by MBE (molecular beam epitaxy) in a VG-80 system on n+-type (100)-oriented Si substrates. The relaxed Si layer was formed by deposition of δ1m of Si with a thin Sb doped layer 200 nm below the surface. The strained Si(SiGe) layer was grown on a relaxed Si.92Ge.08 (Si) layer as a top cap. The diffusivity of Sb was found to be concentration and time independent and described within a diffusion model in which the as-grown profile is allowed to broaden with time according to the concentration gradient and the overall diffusion coefficient. The chemical peak concentration of Sb in the as-grown layers is comparable to the intrinsic carrier concentration, thus the concentration effect is expected to be negligible.

引用

页码：1125 / 1130

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