Diffusion of Sb in Si1-xGex-Alloy Layers

被引：0
|
作者：
Kringhøj, P. [1 ]
Nylandsted Larsen, A. [1 ]
机构：
[1] Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
来源：
Defect and Diffusion Forum | 1997年 / 143-147卷
关键词：
Carrier concentration - Molecular beams - Si-Ge alloys - Diffusion - Molecular beam epitaxy - Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The diffusion in Si1-xGex alloy lasers, and the change in diffusivity due to chemical effects and secondly strain effects was investigated. All structures were grown by MBE (molecular beam epitaxy) in a VG-80 system on n+-type (100)-oriented Si substrates. The relaxed Si layer was formed by deposition of δ1m of Si with a thin Sb doped layer 200 nm below the surface. The strained Si(SiGe) layer was grown on a relaxed Si.92Ge.08 (Si) layer as a top cap. The diffusivity of Sb was found to be concentration and time independent and described within a diffusion model in which the as-grown profile is allowed to broaden with time according to the concentration gradient and the overall diffusion coefficient. The chemical peak concentration of Sb in the as-grown layers is comparable to the intrinsic carrier concentration, thus the concentration effect is expected to be negligible.
引用
收藏
页码：1125 / 1130
相关论文
共 50 条
  • [31] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6533 - 6540
  • [32] MULTIPLICATION OF DISLOCATIONS IN SI1-XGEX LAYERS ON SI(001)
    CAPANO, MA
    PHYSICAL REVIEW B, 1992, 45 (20): : 11768 - 11774
  • [33] STRAIN RELAXATION IN SI1-XGEX LAYERS ON SI(001)
    CAPANO, MA
    HART, L
    BOWEN, DK
    GORDONSMITH, D
    THOMAS, CR
    GIBBINGS, CJ
    HALLIWELL, MAG
    HOBBS, LW
    JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 260 - 270
  • [34] Influence of alloy inhomogeneities on the determination by Raman scattering of composition and strain in Si1-xGex/Si(001) layers
    Reparaz, J. S.
    Marcus, I. C.
    Goni, A. R.
    Garriga, M.
    Alonso, M. I.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (02)
  • [35] Structural characterization of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrates
    Asano, T
    Nakao, T
    Matada, H
    Tambo, T
    Ueba, H
    Tatsuyama, C
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (12) : 8759 - 8765
  • [36] LUMINESCENCE OF STRAINED SI1-XGEX ALLOY LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ARBETENGELS, V
    TIJERO, JMG
    MANISSADJIAN, A
    WANG, KL
    HIGGS, V
    APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2586 - 2588
  • [37] INVESTIGATION OF THE GROWTH TECHNIQUE DEPENDENCE ON THE OPTICAL-PROPERTIES OF SI1-XGEX ALLOY LAYERS
    ARBETENGELS, V
    TIJERO, JMG
    MANISSADJIAN, A
    WANG, KL
    HIGGS, V
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 406 - 410
  • [38] DAMAGE ACCUMULATION DURING ION-IMPLANTATION OF UNSTRAINED SI1-XGEX ALLOY LAYERS
    HAYNES, TE
    HOLLAND, OW
    APPLIED PHYSICS LETTERS, 1992, 61 (01) : 61 - 63
  • [39] Oxygen diffusion in Si1-xGex alloys
    Khirunenko, L. I.
    Pomozov, Yu. V.
    Sosnin, M. G.
    Duvanskii, A. V.
    Sobolev, N. A.
    Abrosimov, N. V.
    Riemann, H.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4698 - 4700
  • [40] ON THE NATURE OF CROSS-HATCH PATTERNS ON COMPOSITIONALLY GRADED SI1-XGEX ALLOY LAYERS
    SHIRYAEV, SY
    JENSEN, F
    PETERSEN, JW
    APPLIED PHYSICS LETTERS, 1994, 64 (24) : 3305 - 3307
12345