53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz

被引：0

作者：

Huber, D. ^{[1
]}

Bitter, M. ^{[1
]}

Dulk, M. ^{[1
]}

Fischer, S. ^{[1
]}

Gini, E. ^{[1
]}

Neiger, A. ^{[1
]}

Schreieck, R. ^{[1
]}

Bergamaschi, C. ^{[1
]}

Jackel, H. ^{[1
]}

机构：

[1] Swiss Federal Inst of Technology, Zurich, Zurich, Switzerland

来源：

Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年

关键词：

Amplifiers (electronic) - Bandwidth - Heterojunction bipolar transistors - Integrated optoelectronics - Monolithic integrated circuits - Semiconducting indium gallium arsenide - Semiconducting indium phosphide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report on the characterization of a monolithically integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of λ = 1.55 μm. The preamplifier achieves a transimpedance gain of 44.3 dBΩ (164 Ω) and a bandwidth of 63 GHz, whereas the optical/electrical -3 dB-bandwidth of the entire receiver is 53 GHz. A pulse width of 10.5 ps was measured for the system consisting of receiver, on-wafer probe, bias-tee and sampling-scope. Finally we present eye pattern measurements at 40 Gb/s with a RZ coded optical input signal.

引用

页码：325 / 328

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