37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

被引:0
|
作者
Huang, Wei-kuo [1 ]
Huang, Shou-chian [1 ]
Chung, Hsiao-wen [1 ]
Hsin, Yue-ming [1 ]
Shi, Jin-wei [1 ]
Kao, Yung-chung [2 ]
Kuo, Jenn-ming [2 ]
机构
[1] Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan
[2] Intelligent Epitaxy Technology, Inc., Richardson, TX 75081, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1323 / 1325
相关论文
共 50 条
  • [1] 37-GHz bandwidth monolithically integrated InPHBT/evanescently coupled photodiode
    Huang, Wei-kuo
    Huang, Shou-chian
    Chung, Hsiao-wen
    Hsin, Yue-ming
    Shi, Jin-wei
    Kao, Yung-chung
    Kuo, Jerm-ming
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1323 - 1325
  • [2] An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode
    Shumakher, Evgeny
    Magrisso, Tsufit
    Kraus, Shraga
    Cohen-Elias, Doron
    Gavrilov, Arkady
    Cohen, Shimon
    Eisenstein, Gadi
    Ritter, Dan
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (13-16) : 2679 - 2683
  • [3] A 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz
    Huber, D
    Bitter, M
    Dülk, M
    Fischer, S
    Gini, E
    Neiger, A
    Schreieck, R
    Bergamaschi, C
    Jäckel, H
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 325 - 328
  • [4] 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz
    Huber, D.
    Bitter, M.
    Dulk, M.
    Fischer, S.
    Gini, E.
    Neiger, A.
    Schreieck, R.
    Bergamaschi, C.
    Jackel, H.
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 325 - 328
  • [5] 36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InPHBT/evanescently coupled photodiode
    Huang, W. -K.
    Huang, S. -C.
    Hsin, Y. -M.
    Shi, J. -W.
    Kao, Y. -C.
    Kuo, J. M.
    IET OPTOELECTRONICS, 2008, 2 (01) : 6 - 9
  • [6] High-Power Evanescently Coupled Waveguide MUTC Photodiode With > 105-GHz Bandwidth
    Li, Qinglong
    Sun, Keye
    Li, Kejia
    Yu, Qianhuan
    Runge, Patrick
    Ebert, Willi
    Beling, Andreas
    Campbell, Joe C.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 35 (21) : 4752 - 4757
  • [7] 23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product
    Huber, D
    Bitter, M
    Romier, S
    Schnyder, I
    Bauknecht, R
    Morf, T
    Bergamaschi, C
    Jackel, H
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 447 - 450
  • [8] A Monolithically Integrated InP HBT-based THz Detector
    Raemer, Adam
    Negri, Edoardo
    Yacoub, Hady
    Theumer, Jonas
    Wartena, Joost
    Krozer, Viktor
    Heinrich, Wolfgang
    2024 54TH EUROPEAN MICROWAVE CONFERENCE, EUMC 2024, 2024, : 1000 - 1003
  • [9] 37-GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s
    Mekonnen, GG
    Schlaak, W
    Bach, HG
    Steingrüber, R
    Seeger, A
    Engel, T
    Passenberg, W
    Umbach, A
    Schramm, C
    Unterbörsch, G
    van Waasen, S
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (02) : 257 - 259
  • [10] A MONOLITHICALLY INTEGRATED PHOTORECEIVER COMPATIBLE WITH INP INGAAS HBT FABRICATION PROCESS
    SANO, E
    YONEYAMA, M
    NAKAJIMA, H
    MATSUOKA, Y
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (04) : 638 - 643