共 50 条
- [21] Design methodology and applications of SiGeBiCMOS cascode opamps with up to 37-GHz unity gain bandwidth 2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 283 - 286
- [23] InP HEMT W-band amplifier with monolithically integrated HBT bias regulation IEEE Microwave Guided Wave Lett, 8 (222-224):
- [24] Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 520 - 524
- [25] An InP HEMT W-band amplifier with monolithically integrated HBT bias regulation IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (08): : 222 - 224
- [27] 29GHz-bandwidth monolithically integrated EAM-VCSEL 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019,
- [28] A High Bandwidth Evanescently Coupled Waveguide InGaAs/InP UTC-PD at Zero Bias 2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2017,
- [30] A 300-GHz Integrated Transmitter based on InP HBT Technology 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 524 - 526