53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz

被引：0
|
作者：
Huber, D. [1 ]
Bitter, M. [1 ]
Dulk, M. [1 ]
Fischer, S. [1 ]
Gini, E. [1 ]
Neiger, A. [1 ]
Schreieck, R. [1 ]
Bergamaschi, C. [1 ]
Jackel, H. [1 ]
机构：
[1] Swiss Federal Inst of Technology, Zurich, Zurich, Switzerland
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
关键词：
Amplifiers (electronic) - Bandwidth - Heterojunction bipolar transistors - Integrated optoelectronics - Monolithic integrated circuits - Semiconducting indium gallium arsenide - Semiconducting indium phosphide;
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摘要：
We report on the characterization of a monolithically integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of λ = 1.55 μm. The preamplifier achieves a transimpedance gain of 44.3 dBΩ (164 Ω) and a bandwidth of 63 GHz, whereas the optical/electrical -3 dB-bandwidth of the entire receiver is 53 GHz. A pulse width of 10.5 ps was measured for the system consisting of receiver, on-wafer probe, bias-tee and sampling-scope. Finally we present eye pattern measurements at 40 Gb/s with a RZ coded optical input signal.
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页码：325 / 328
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