CHEMICAL DISSOLUTION OF UNREACTED FREE SILICON IN SILICON NITRIDE.

被引：0

作者：

Bartosiewicz, Leslie

机构：

来源：

Praktische Metallographie/Practical Metallography | 1976年 / 13卷 / 08期

关键词：

CERAMIC MATERIALS - Chemical Analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The search for a chemical method for selective and reproducible determination of the free (unreacted) silicon in silicon nitrides has led to the development of a generally applicable reagent that removes the free silicon from sections of polished samples. The etchant used is 60 ml HNO//3, 25 ml HF, and 3 to 5 drops of 30% hydrogen peroxide. The technique and the limitations of the analysis are discussed.

引用

页码：379 / 382

共 50 条

[21] TORSIONAL STRENGTH OF PRESSURELESS-SINTERED SILICON NITRIDE.
Matsusue, Katsutoshi
Fujisawa, Yoshiaki
Takahara, Kitao
Yogyo Kyokai Shi/Journal of the Ceramic Society of Japan, 1983, 91 (07): : 346 - 348
[22] Phosphorescence-capable, by silicon activated aluminium nitride.
Tiede, E
Thimann, M
Sensse, K
BERICHTE DER DEUTSCHEN CHEMISCHEN GESELLSCHAFT, 1928, 61 : 1568 - 1573
[23] STARTING POWDER REQUIREMENTS FOR HOT PRESSING OF SILICON NITRIDE.
Engel, W.
Powder Metallurgy, 1978, 10 (03) : 124 - 127
[24] Optical activity and population inversion of Er doped in silicon-rich silicon nitride.
Chang, Jee Soo
Kim, InYong
Sung, Gun Yong
Shin, Jung H.
2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2010, : 293 - 295
[25] Isotope effects in the band spectra of boron monoxide and silicon nitride.
Mulliken, RS
NATURE, 1924, 113 : 423 - 424
[26] Luminescence and electronic structure of amorphous silicon nitride. Nitrogen subsystem
Belyi, VI
Rastorguev, AA
JOURNAL OF STRUCTURAL CHEMISTRY, 2000, 41 (03) : 529 - 530
[27] EFFECT OF NITROGEN ON THE alpha / beta PHASE CONVERSION IN SILICON NITRIDE.
Fukuhara, Mikio
Journal of the American Ceramic Society, 1985, 68 (09):
[28] Luminescence and electronic structure of amorphous silicon nitride. Nitrogen subsystem
V. I. Belyi
A. A. Rastorguev
Journal of Structural Chemistry, 2000, 41 : 529 - 530
[29] Plasma CVD of silicon nitride. Process design for increased flexibility
Kiermasz, Adrian
Beekman, Knut
Semiconductor International, 1990, 13 (07) : 108 - 111
[30] Isotope effects in the band spectra of boron monoxide and silicon nitride.
Darrow, KK
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA AND REVIEW OF SCIENTIFIC INSTRUMENTS, 1924, 9 (04): : 409 - 409

← 1 2 3 4 5 →