Study of the structure of porous silicon via positron annihilation experiments

被引：0

作者：

Biasini, M. ^{[1
,2
]}

Ferro, G. ^{[1
,2
]}

Monge, M.A. ^{[1
,3
]}

Di Francia, G. ^{[4
]}

La Ferrara, V. ^{[4
]}

机构：

[1] ENEA, Via don Fiammelli 2, I-40128 Bologna, Italy

[2] Ist. Naz. di Fisica della Materia

[3] Dipartamento di Fisica, Universidad Carlos III, Av. Universidad 30, E-28911 Leganes (Madrid), Spain

[4] ENEA, Via Vecchio Macello, I-80055 Portici, Italy

来源：

Physica Status Solidi (A) Applied Research | 2000年 / 182卷 / 01期

关键词：

Atoms - Band structure - Charged particles - Crystal defects - Crystals - Photoluminescence - Pore size - Radiation - Spectroscopic analysis - Two dimensional;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We performed two-dimensional angular correlation of the electron-positron annihilation radiation (2D-ACAR) and positron lifetime measurements on a porous Si sample. From the width of the narrow 2D-ACAR components, attributed to positronium atom, we estimated the average size of the pores to be approx. 2.4 nm and did not find evidence of a preferential propagation of the pores. Moreover, by comparing the 2D-ACAR spectrum with that observed in a pure Si crystal we isolated a further isotropic component to be attributed to crystal defects of unknown origin.

引用

页码：279 / 284

共 50 条

[1] Study of the structure of porous silicon via positron annihilation experiments
Biasini, M
Ferro, G
Monge, MA
Di Francia, G
La Ferrara, V
JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (27) : 5961 - 5970
[2] Study of the structure of porous silicon via positron annihilation experiments
Biasini, M
Ferro, G
Monge, MA
Di Francia, G
La Ferrara, V
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 182 (01): : 279 - 284
[3] A positron annihilation spectroscopy study of porous silicon
Britkov, O. M.
Gavrilov, S. A.
Grafutin, V. I.
Kalugin, V. V.
Ilyukhina, O. V.
Myasishcheva, G. G.
Prokop'ev, E. P.
Timoshenkov, S. P.
Funtikov, Yu. V.
HIGH ENERGY CHEMISTRY, 2007, 41 (01) : 48 - 52
[4] A positron annihilation spectroscopy study of porous silicon
O. M. Britkov
S. A. Gavrilov
V. I. Grafutin
V. V. Kalugin
O. V. Ilyukhina
G. G. Myasishcheva
E. P. Prokop’ev
S. P. Timoshenkov
Yu. V. Funtikov
High Energy Chemistry, 2007, 41 : 48 - 52
[5] Study of porous silicon layers by the positron annihilation technique
Shantarovich, VP
Kevdina, IB
Novikov, YA
Dzhein, VK
Gupta, A
FIZIKA TVERDOGO TELA, 1996, 38 (09): : 2686 - 2692
[6] A positron annihilation investigation of porous silicon
Dannefaer, S
Kerr, D
Craigen, D
Bretagnon, T
Teliercio, T
Foucaran, A
JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) : 9110 - 9117
[7] POSITRON-ANNIHILATION IN POROUS SILICON
ITOH, Y
MURAKAMI, H
KINOSHITA, A
APPLIED PHYSICS LETTERS, 1993, 63 (20) : 2798 - 2799
[8] POSITRON-ANNIHILATION STUDY ON NANOMETER CAVITIES IN POROUS SILICON
ITOH, Y
MURAKAMI, H
KINOSHITA, A
HYPERFINE INTERACTIONS, 1994, 84 (1-4): : 121 - 126
[9] POROUS SILICON INVESTIGATED BY POSITRON-ANNIHILATION
DELACRUZ, RM
PAREJA, R
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02): : 463 - 468
[10] An investigation of porous silicon by means of positron annihilation
Dannefaer, S
Wiebe, C
Kerr, D
JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 323 - 326

← 1 2 3 4 5 →