A positron annihilation spectroscopy study of porous silicon

被引：0
|
作者：
O. M. Britkov
S. A. Gavrilov
V. I. Grafutin
V. V. Kalugin
O. V. Ilyukhina
G. G. Myasishcheva
E. P. Prokop’ev
S. P. Timoshenkov
Yu. V. Funtikov
机构：
[1] Moscow State Institute of Electronic Engieering,
[2] Institute of Theoretical and Experimental Physics,undefined
来源：
High Energy Chemistry | 2007年 / 41卷
关键词：
Porous Silicon; Porous Layer; Angular Correlation; Positron Annihilation; High Energy Chemistry;
D O I：
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学科分类号：
摘要：
It was shown that the spectra of angular correlation of annihilation radiation in porous silicon are approximated well by a parabola (Ip) and two Gaussians (Ig1, Ig2). The narrow Gaussian component Ig1 is most likely due to the annihilation of localized parapositronium in pores. The full width at half maximum is on the order of 0.8 mrad, a value that corresponds to the kinetic energy of an annihilating positron-electron pair (0.079 ± 0.012 eV), and its intensity is about 1.5%. The total positronium yield in porous silicon reaches 6% in this case. The particle radius determined in the study is about 10–20 Å.
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页码：48 / 52
页数：4
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