Study of the structure of porous silicon via positron annihilation experiments

被引:0
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作者
Biasini, M. [1 ,2 ]
Ferro, G. [1 ,2 ]
Monge, M.A. [1 ,3 ]
Di Francia, G. [4 ]
La Ferrara, V. [4 ]
机构
[1] ENEA, Via don Fiammelli 2, I-40128 Bologna, Italy
[2] Ist. Naz. di Fisica della Materia
[3] Dipartamento di Fisica, Universidad Carlos III, Av. Universidad 30, E-28911 Leganes (Madrid), Spain
[4] ENEA, Via Vecchio Macello, I-80055 Portici, Italy
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关键词
Atoms - Band structure - Charged particles - Crystal defects - Crystals - Photoluminescence - Pore size - Radiation - Spectroscopic analysis - Two dimensional;
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摘要
We performed two-dimensional angular correlation of the electron-positron annihilation radiation (2D-ACAR) and positron lifetime measurements on a porous Si sample. From the width of the narrow 2D-ACAR components, attributed to positronium atom, we estimated the average size of the pores to be approx. 2.4 nm and did not find evidence of a preferential propagation of the pores. Moreover, by comparing the 2D-ACAR spectrum with that observed in a pure Si crystal we isolated a further isotropic component to be attributed to crystal defects of unknown origin.
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页码:279 / 284
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