Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

被引:0
|
作者
机构
[1] Macdonald, Daniel
[2] Deenapanray, Prakash N. K.
[3] Diez, Stephan
来源
Macdonald, D. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] CHARACTERIZATION OF ION-IMPLANTED SILICON ANNEALED WITH A GRAPHITE RADIATION SOURCE
    WILSON, SR
    GREGORY, RB
    PAULSON, WM
    DIEHL, HT
    HAMDI, AH
    MCDANIEL, FD
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1734 - 1737
  • [32] THE AMORPHIZATION AND SUBSEQUENT RECOVERY OF INSITU ANNEALED ION-IMPLANTED SILICON
    CLAEYS, C
    BENDER, H
    CEROFOLINI, G
    MEDA, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C122 - C122
  • [33] Raman spectroscopic study of ion-implanted and annealed silicon.
    Tuschel, DD
    Lavine, JP
    Russell, JB
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 549 - 554
  • [34] CELL-FORMATION IN ION-IMPLANTED, LASER ANNEALED SILICON
    NARAYAN, J
    WHITE, CW
    APPLETON, BR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 203 - 203
  • [35] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED LASER-ANNEALED SILICON
    YOUNG, RT
    NARAYAN, J
    WHITE, CW
    WOOD, RF
    CLELAND, JW
    WESTBROOK, RD
    MOONEY, PM
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 41 - 44
  • [36] SIMS investigations of gettering centers in ion-implanted and annealed silicon
    Gammer, K
    Gritsch, M
    Peeva, A
    Kögler, R
    Hutter, H
    JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 2002, 20 (01): : 47 - 55
  • [37] Comment on "Amorphization and defect recombination in ion implanted silicon carbide"
    Heera, V
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) : 3935 - 3936
  • [38] Electron holography study of voids in self-annealed implanted silicon
    Beeli, C
    Matteucci, G
    Lulli, G
    Merli, PG
    Migliori, A
    PHILOSOPHICAL MAGAZINE LETTERS, 1998, 78 (06) : 445 - 451
  • [39] Boron segregation to extended defects induced by self-ion implantation into silicon
    Xia, JX
    Saito, T
    Kim, R
    Aoki, T
    Kamakura, Y
    Taniguchi, K
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7597 - 7603
  • [40] SELF-ANNEALED ION-IMPLANTED SOLAR-CELLS
    GABILLI, E
    LOTTI, R
    MERLI, PG
    NIPOTI, R
    OSTOJA, P
    APPLIED PHYSICS LETTERS, 1982, 41 (10) : 967 - 968