Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

被引：0
|
作者：
机构：
[1] Macdonald, Daniel
[2] Deenapanray, Prakash N. K.
[3] Diez, Stephan
来源：
Macdonald, D. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] DEFECT DISTRIBUTION IN SELF-ANNEALED AND IN 2-STEP AS+ION IMPLANTED SILICON
    BENDER, H
    CLAEYS, C
    CEROFOLINI, CF
    MEDA, L
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 485 - 490
  • [22] MINORITY CARRIER LIFETIME IN ION-IMPLANTED AND ANNEALED SILICON
    DAVIES, DE
    ROOSILD, SA
    APPLIED PHYSICS LETTERS, 1970, 17 (03) : 107 - &
  • [23] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON
    KIRKPATRICK, CG
    NOONAN, JR
    STREETMAN, BG
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 97 - 106
  • [24] Amorphization and defect recombination in ion implanted silicon carbide
    Grimaldi, MG
    Calcagno, L
    Musumeci, P
    Frangis, N
    VanLanduyt, J
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7181 - 7185
  • [25] TEM CHARACTERIZATION OF SELF-ANNEALED AS-IMPLANTED SILICON
    LULLI, G
    MERLI, PG
    MIGLIORI, A
    BAUER, R
    ULTRAMICROSCOPY, 1990, 32 (02) : 212 - 213
  • [26] Modification of mechanical properties of silicon nanocantilevers by self-ion implantation
    Virwani, KR
    Malshe, AP
    Sood, DK
    Elliman, RG
    APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3148 - 3150
  • [27] Light emitting properties of Si+ self-ion implanted silicon-on-insulator from visible to infrared band
    Ouyang, Lingxi
    Wang, Chong
    Feng, Xiaoxu
    Yang, Jie
    Zhou, Mengwei
    Qiu, Feng
    Wang, Rongfei
    Yang, Yu
    OPTICS EXPRESS, 2018, 26 (12): : 15899 - 15907
  • [28] Thermal diffusivity degradation and point defect density in self-ion implanted tungsten
    Reza, Abdallah
    Yu, Hongbing
    Mizohata, Kenichiro
    Hofmann, Felix
    ACTA MATERIALIA, 2020, 193 : 270 - 279
  • [29] Influence of MeV helium implantation on deuterium retention in self-ion implanted tungsten
    Markina, E.
    Mayer, M.
    Elgeti , S.
    Schwarz-Selinger, T.
    PHYSICA SCRIPTA, 2014, T159
  • [30] MECHANISMS OF AMORPHIZATION IN ION-IMPLANTED CRYSTALLINE SILICON
    CAMPISANO, SU
    COFFA, S
    RAINERI, V
    PRIOLO, F
    RIMINI, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 514 - 518
12345