DRAM technology perspective for gigabit era

被引:0
|
作者
Samsung Electronics Co, Kyungki-Do, Korea, Republic of [1 ]
机构
来源
IEEE Trans Electron Devices | / 3卷 / 598-608期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Gigabit ethernet: Is it a disruptive technology?
    Skoog, RA
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 287 - 288
  • [22] Information Technology in the Internet Era: Critical Theory Perspective
    Santoro, Flavia Maria
    AMCIS 2017 PROCEEDINGS, 2017,
  • [23] A 0.115μm2 8F2 DRAM working cell with LPRD(Low_Prasitic_Resistance Device) and poly metal gate Technology for Gigabit DRAM
    Noh, H
    Cho, W
    Jeong, G
    Huh, M
    Ahn, J
    Kim, Y
    Jeong, S
    Lee, S
    Kim, D
    Kim, H
    Suh, J
    Park, J
    Lee, SD
    Yoon, HK
    2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 25 - 26
  • [24] Study of the robust stack cell capacitor structure using double mold oxide (DMO) technology for a gigabit-density DRAM and beyond
    Oh, JH
    Jeong, H
    Park, JM
    Park, JY
    Hong, KH
    Choi, YJ
    Lee, KH
    Chung, TY
    Park, YJ
    Kim, K
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 884 - 887
  • [25] Microstructure control of (Ba,Sr)TiO3 films for gigabit dram
    Shen, H
    Kotecki, DE
    Murphy, RJ
    Zaitz, M
    Laibowitz, RB
    Shaw, TM
    Saenger, KL
    Baniecki, J
    Beitel, G
    Klueppel, V
    Cerva, H
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 33 - 38
  • [26] The electrical characteristics analysis of SiOxNy ARC for sub-0.17• •Gigabit DRAM
    Lee, CH
    Son, NJ
    Hong, SC
    Lee, SM
    Park, DG
    Jang, WH
    An, TH
    Lee, W
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 38 - 41
  • [27] The challenge of 1-gigabit DRAM development when using optical lithography
    Farrell, T
    Nunes, R
    Samuels, D
    Thomas, A
    Ferguson, R
    Molless, A
    Wong, A
    Conley, W
    Wheeler, D
    Credendino, S
    Naeem, M
    Hoh, P
    Lu, ZJ
    OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 333 - 341
  • [28] Plasma CVD of (BaSr)TiO3 Dielectrics for Gigabit DRAM Capacitors
    M. Yoshida
    H. Yabuta
    S. Yamamichi
    H. Yamaguchi
    S. Sone
    K. Arita
    T. Iizuka
    S. Nishimoto
    Y. Kato
    Journal of Electroceramics, 1999, 3 : 123 - 133
  • [29] Plasma CVD of (BaSr)TiO3 dielectrics for gigabit DRAM capacitors
    Yoshida, M
    Yabuta, H
    Yamamichi, S
    Yamaguchi, H
    Sone, S
    Arita, K
    Iizuka, T
    Nishimoto, S
    Kato, Y
    JOURNAL OF ELECTROCERAMICS, 1999, 3 (02) : 123 - 133
  • [30] Transistor challenges - A DRAM perspective
    Faul, JW
    Henke, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 237 (1-2): : 228 - 234