Microstructure control of (Ba,Sr)TiO3 films for gigabit dram

被引：0

作者：

Shen, H ^{[1
]}

Kotecki, DE ^{[1
]}

Murphy, RJ ^{[1
]}

Zaitz, M ^{[1
]}

Laibowitz, RB ^{[1
]}

Shaw, TM ^{[1
]}

Saenger, KL ^{[1
]}

Baniecki, J ^{[1
]}

Beitel, G ^{[1
]}

Klueppel, V ^{[1
]}

Cerva, H ^{[1
]}

机构：

[1] Siemens Microelect Inc, Hopewell Junction, NY 12533 USA

来源：

FERROELECTRIC THIN FILMS VI | 1998年 / 493卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Ba,Sr)TiO3 films were deposited on Pt-coated SiO2/Si wafers by the MOCVD method. Experiments were conducted to investigate the mechanisms of nucleation and growth. It was observed that the diameter of the (Ba, Sr)TiO3 grains is established in the early stages of nucleation and does not increase substantially during the growth of the film. By controlling the process conditions, it is possible to control the final microstructure and improve the electrical properties of (Ba, Sr)TiO3 films. I-V and C-V measurements show that (Ba, Sr)TiO3 films with a thickness of approximately 15nm can produce a charge storage density of >120fF/mu m(2) with a leakage current density of < 10 nA/cm(2) at 1V, making them suitable for Gigabit-scale DRAM applications.

引用

页码：33 / 38

页数：6

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