Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

被引：0
|
作者：
Farvacque, J.-L. [1 ]
Bougrioua, Z. [2 ]
Moerman, I. [2 ]
Van Tendeloo, G. [3 ]
Lebedev, O. [3 ]
机构：
[1] LSPES, Université de Lille, Batiment C6, 59655 Villeneuve d'ascq, France
[2] INTEC, Gent University IMEC, Sint Pietersnieuwstraat 41, B-9000 Gent, Belgium
[3] EMAT, Department of Physics, University of Antwerp, B-2020 Antwerp, Belgium
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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页码：140 / 143
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