Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

被引：0
|
作者：
Farvacque, J.-L. [1 ]
Bougrioua, Z. [2 ]
Moerman, I. [2 ]
Van Tendeloo, G. [3 ]
Lebedev, O. [3 ]
机构：
[1] LSPES, Université de Lille, Batiment C6, 59655 Villeneuve d'ascq, France
[2] INTEC, Gent University IMEC, Sint Pietersnieuwstraat 41, B-9000 Gent, Belgium
[3] EMAT, Department of Physics, University of Antwerp, B-2020 Antwerp, Belgium
来源：
Physica B: Condensed Matter | 1999年 / 273卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：140 / 143
相关论文
共 50 条
  • [21] ELECTRICAL-PROPERTIES OF UNDOPED AND SI-DOPED AL0.48IN0.52AS GROWN BY LIQUID-PHASE EPITAXY
    TANAHASHI, T
    NAKAJIMA, K
    YAMAGUCHI, A
    UMEBU, I
    APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1030 - 1032
  • [22] Properties of Si-doped GaN films grown using multiple AlN interlayers
    Code 6800, Electronics Sci. and Technol. Div., Naval Research Laboratory, Washington, DC 20375, United States
    Appl Phys Lett, 20 (3141-3143):
  • [23] Properties of Si-doped GaN films grown using multiple AlN interlayers
    Koleske, DD
    Twigg, ME
    Wickenden, AE
    Henry, RL
    Gorman, RJ
    Freitas, JA
    Fatemi, M
    APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3141 - 3143
  • [24] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE
    Li, Da-Bing
    Katsuno, Takuya
    Aoki, Masakazu
    Miyake, Hideto
    Hiramatsu, Kazumasa
    Shibata, Tomohiko
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2494 - +
  • [25] Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
    Gogova, D.
    Wagner, G.
    Baldini, M.
    Schmidbauer, M.
    Irmscher, K.
    Schewski, R.
    Galazka, Z.
    Albrecht, M.
    Fornari, R.
    JOURNAL OF CRYSTAL GROWTH, 2014, 401 : 665 - 669
  • [26] TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
    N. A. Cherkashin
    N. A. Bert
    Yu. G. Musikhin
    S. V. Novikov
    T. S. Cheng
    C. T. Foxon
    Semiconductors, 2000, 34 : 867 - 871
  • [27] High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films
    Zielinska-Rohozinska, E
    Regulska, M
    Harutyunyan, VS
    Pakula, K
    Borowski, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 441 - 444
  • [28] Electrical transport properties of Si-doped hexagonal boron nitride epilayers
    Majety, S.
    Doan, T. C.
    Li, J.
    Lin, J. Y.
    Jiang, H. X.
    AIP ADVANCES, 2013, 3 (12):
  • [29] TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
    Cherkashin, NA
    Bert, NA
    Musikhin, YG
    Novikov, SV
    Cheng, TS
    Foxon, CT
    SEMICONDUCTORS, 2000, 34 (08) : 867 - 871
  • [30] A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN
    Song, Keun Man
    Kim, Hogyoung
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
12345