2-D carrier profiling of InP-based structures using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

被引：0
|
作者：
De Wolf, P. [1 ]
Erickson, A. [1 ]
Brazel, E. [1 ]
Lefevre, M. [1 ]
Geva, M. [1 ]
机构：
[1] Digital Instruments, Santa Barbara, United States
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
关键词：
Scanning capacitance microscopy (SCM) - Scanning spreading resistance microscopy (SSRM);
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学科分类号：
摘要：
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页码：162 / 165
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