Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

被引：5
|
作者：
Biberger, Roland [1 ]
Benstetter, Guenther [1 ]
Schweinboeck, Thomas [2 ]
Breitschopf, Peter [1 ]
Goebel, Holger [3 ]
机构：
[1] Univ Appl Sci Deggendorf, D-94469 Deggendorf, Germany
[2] Infineon Technol, Failure Anal, D-81739 Munich, Germany
[3] Univ Bundeswehr Hamburg, Helmut Schmidt Univ, D-22043 Hamburg, Germany
来源：
MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期
关键词：
6;
D O I：
10.1016/j.microrel.2008.06.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1339 / 1342
页数：4
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