UNIFORMITY EVALUATION OF MESFET'S FOR GaAs LSI FABRICATION.

被引：0

作者：

Matsuoka, Yutaka ^{[1
]}

Ohwada, Kuniki ^{[1
]}

Hirayama, Masahiro ^{[1
]}

机构：

[1] NTT, Atsugi Electrical Communication, Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communication Lab, Atsugi, Jpn

来源：

IEEE Transactions on Electron Devices | 1984年 / ED-31卷 / 08期

关键词：

INTEGRATED CIRCUITS; LSI; -; Manufacture;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

Studies were made on GaAs MESFET I-V characteristic scattering using self-aligned FETs on semi-insulating substrates. Surface treatment before gate-metal evaporation was found to have a satisfactory effect on FET drain current. The two main factors of threshold-voltage scattering in self-aligned FETs were clarified. One is the lack of uniformity in gate lengths, and the other is substrate nonuniformity. An analytical method was proposed to distinguish between threshold-voltage dispersions attributed to the factors without direct measurement of the gate lengths. Threshold-voltage scattering due to crystal inhomogeneity was estimated for both LEC and HB substrates, and for both the entire area of a 2-in wafer and an area as small as 400 mu m**2.

引用

页码：1062 / 1067

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