Gamma radiation induced effects in GaAs MESFET's

被引：0
|
作者：
Manchanda, R [1 ]
Nayyar, NK [1 ]
Balakrishnan, VR [1 ]
Muralidharan, R [1 ]
Vyas, HP [1 ]
Kumar, V [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of the present work is to study the irradiation-induced effects in GaAs MESFET's. These devices were subjected to a gamma dose of 3.3x1.0(8) rads. From the forward I-V characteristics it is seen that after irradiation there is degradation in the Schottky barrier height of the gate and the ideality. factor. Comparison of Nc-v versus depth profile obtained using C-V measurements before and after, irradiation reveals decrease in the ionised dopant concentration. The transfer I-V characteristics measured at different frequencies have shown increased dispersion of gm in the linear region and an increase in magnitude after irradiation. The increase in drift mobility has been attributed to irradiation induced order effect. The increase in dispersion of gm can be due to generation of interface states at the GaAs-SI3N4 interface.
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页码：853 / 856
页数：4
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